BUR51 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

0.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 300 V

Tcase = 125

0.2

ICEO

Collector Cut-off

Current (IB = 0)

VCE =200 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 7 V

0.2

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 200 mA

200

VEBO

Emitter-base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-emitter

Saturation Voltage

IC = 30 A

IB = 2 A

IC = 50 A

IB = 5 A

0.9

1.5

VBE(sat)

∗ Base-emitter

Saturation Voltage

IC = 30 A

IB = 2 A

IC = 50 A

IB = 5 A

1.55

1.8

hFE

∗

DC Current Gain

IC = 5 A

VCE = 4 V

IC = 50 A

VCE = 4 V

100

Is/b

Second Breakdown

Collector Current

VCE = 20 V

t = 1 s

17.5

Transition-Frequency

IC = 1 A

VCE = 5 V

f = 1 MHz

MHz

ton

Turn-on Time

IC = 50 A

IB1 = 5 A

VCC = 100 V

0.35

µs

Storage Time

IC = 50 A

IB1 = 5 A

IB2 = -5 A

VCC = 100 V

0.9

µs

Fall Time

0.24

0.6

µs

Clamped Es/b Collector

Current

Vclamp = 200 V

L = 500

µH

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUR51

2/4

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