BUR52 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

0.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 350 V

Tcase = 125

0.2

ICEO

Collector Cut-off

Current (IB = 0)

VCE =250 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 7 V

0.2

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 200 mA

250

VEBO

Emitter-base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-emitter

Saturation Voltage

IC = 25 A

IB = 2 A

IC = 40 A

IB = 4 A

0.7

1.5

VBE(sat)

∗ Base-emitter

Saturation Voltage

IC = 25 A

IB = 2 A

IC = 40 A

IB = 4 A

1.5

1.8

hFE

∗

DC Current Gain

IC = 5 A

VCE = 4 V

IC = 40 A

VCE = 4 V

100

Is/b

Second Breakdown

Collector Current

VCE = 20 V

t = 1 s

17.5

Transition-Frequency

IC = 1 A

VCE = 5 V

f = 1 MHz

MHz

ton

Turn-on Time

IC = 40 A

IB1 = 4 A

VCC = 100 V

0.3

µs

Storage Time

IC = 40 A

IB1 = 4 A

IB2 = -4 A

VCC = 100 V

1.2

µs

Fall Time

0.2

0.6

µs

Clamped Es/b Collector

Current

Vclamp = 250 V

L = 500

µH

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUR52

2/4

BUR52 数据表(PDF) 2 Page - STMicroelectronics

BUR52 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4

数据表下载

链接网址

BUR52 数据表(PDF) 2 Page - STMicroelectronics

BUR52 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4

数据表 下载

链接网址

数据表下载