BUT30V datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthc -h

Thermal Resistance Junction-case

Max

Thermal Resistance Case-heats ink With Conductive

Grease Applied

Max

0.5

0.05

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICER

Collect or Cut-off

Current (RBE =5

Ω)

VCE =VCEV

Tj =100

ICEV

Collect or Cut-off

Current (VBE =-5V)

VCE =VCEV

Tj =100

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

VCEO(SUS) * Collector-Emitter

Sustaining Voltage

IC =0.2 A

L =25 mH

Vcla mp = 125 V

125

hFE

∗

DC Current G ain

IC =100 A

VCE =5 V

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =50 A

IB =2.5 A

IC =50 A

IB =2.5 A

Tj =100

IC =100 A

IB =10 A

IC =100 A

IB =10 A

Tj =100

0. 45

0. 55

0.7

0.9

1.2

0.9

1.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =50 A

IB =2.5 A

IC =50 A

IB =2.5 A

Tj =100

IC =100 A

IB =10 A

IC =100 A

IB =10 A

Tj =100

1. 15

1.1

1. 45

1. 55

1.4

1.8

1.9

diC/dt

Rate of Rise of

On-stat e Collector

VCC =300 V

RC =0

tp =3

µs

IB1 =15 A

Tj =100

o C

270

350

µs

VCE(3

µs)•• Collector-Emitter

Dynamic Voltage

VCC =300 V

RC =1

Ω

IB1 =15 A

Tj =100

2.7

3.5

VCE(5

µs)•• Collector-Emitter

Dynamic Voltage

VCC =300 V

RC =1

Ω

IB1 =15 A

Tj =100

22.5

St orage Time

Fall T ime

Cross-over T ime

IC =100 A

VCC =90 V

VBB =-5 V

RBB =0.47

Ω

Vcla mp = 125 V IB1 =10 A

L= 45

µHTj =100 oC

0.1

0.2

0.35

µs

VCEW

Maximum Collect or

Emitt er Volt age

Without Snubber

ICWoff =150 A

IB1 =10 A

VBB =-5 V

VCC =90 V

L= 30

µHRBB =0.5 Ω

Tj = 125

125

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUT30V

2/7

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