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BUT70 数据表(PDF) 2 Page - STMicroelectronics

部件名 BUT70
功能描述  HIGH POWER NPN SILICON TRANSISTOR
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BUT70 数据表(HTML) 2 Page - STMicroelectronics

  BUT70 Datasheet HTML 1Page - STMicroelectronics BUT70 Datasheet HTML 2Page - STMicroelectronics BUT70 Datasheet HTML 3Page - STMicroelectronics BUT70 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.63
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 5
Ω)
VCE = VCEV
VCE = VCEV
Tc = 100
oC
1
5
mA
mA
ICEV
Collector Cut-off
Current
VCE = VCEV
VBE = -1.5V
VCE = VCEV
VBE = - 1.5V TC =100
oC
1
4
mA
mA
IEBO
Emitter Cut-off
Current (IC = 0)
VEB = - 5 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC = 0.2A
L = 25 mH
125
V
VEBO
Emitter-base
Voltage (IC = 0)
IE = 50 mA
7
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 70 A
IB = 7 A
IC = 70 A
IB = 7 A
Tj = 100
oC
IC = 35 A
IB = 1.75 A
IC = 35 A
IB = 1.75 A
Tj = 100
oC
0.9
1.5
0.9
1.2
V
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 70 A
IB = 7 A
IC = 70 A
IB = 7 A
Tj = 100
oC
IC = 35 A
IB = 1.75 A
IC = 35 A
IB = 1.75 A
Tj = 100
oC
1.8
1.9
1.4
1.4
V
V
V
V
dic/dt
∗
Rated of Rise of
on-state Collector
Current
VCC = 100 V
RC = 0
IB1 = 3.5 A
tp =3
µS
Tj = 100
oC
140
A/
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle < 2 %
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr
ts
tf
Rise Time
Storage Time
Fall Time
VCC = 90 V
IC = 35 A
VBB = -5 V
IB1 = 1.75 A
RB2 = 1.4
Ω
LC =0.13 mH
TJ =100
o C
VCLAMP =125V
1.8
0.2
0.35
µs
µs
µs
BUT70
2/4



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