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LP3879 数据表(PDF) 2 Page - Texas Instruments

部件名 LP3879
功能描述  LP3879 Micropower 800mA Low Noise "Ceramic Stable" Voltage Regulator for Low Voltage Applications
PDF  21 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

LP3879 数据表(HTML) 2 Page - Texas Instruments

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1
2
3
4
5
6
7
8
BYPASS
N/C
GROUND
INPUT
SENSE
OUTPUT
SHUTDOWN
N/C
1
2
3
4
8
7
6
5
GND
BYPASS
N/C
GROUND
INPUT
SENSE
OUTPUT
N/C
SHUTDOWN
4
+
-
5
2
7
3
8
6
1
+
1.23V
LP3879-X.X
*0.01 PF
(See App
Hints)
*4.7 PF
**S/D
+
*10 PF
+
OUTPUT
(Ceramic or
Tantalum
recommended)
N/C
(Ceramic
recommended)
N/C
LP3879
SNVS396B – MAY 2006 – REVISED APRIL 2013
www.ti.com
Basic Application Circuit
*Capacitance values shown are minimum required to assure stability. Larger output capacitor provides improved
dynamic response. Output capacitor must meet ESR requirements (see Application Information).
**The Shutdown pin must be actively terminated (see Application Information). Tie to INPUT (Pin 4) if not used.
Connection Diagram
Figure 1. Top View
Figure 2. Top View
8-Lead SO PowerPad
8-Lead WSON
See DDA0008B Package
See NGT0008A Package
PIN DESCRIPTIONS
Pin
Name
Function
1
BYPASS
The capacitor connected between BYPASS and GROUND lowers output noise voltage
level and is required for loop stability.
2
N/C
DO NOT CONNECT. This pin is used for post package test and must be left floating.
3
GROUND
Device ground.
4
INPUT
Input source voltage.
5
OUTPUT
Regulated output voltage.
6
SENSE
Remote Sense. Tie directly to output or remotely at point of load for best regulation.
7
N/C
No internal connection.
8
SHUTDOWN
Output is enabled above turn-on threshold voltage. Pull down to turn off regulator output.
SO PowerPad,
SUBSTRATE
The exposed die attach pad should be connected to a thermal pad at ground potential. For
WSON
GROUND
additional information on using Texas Instruments' Non Pull Back WSON package, please
refer to WSON application note SNOA401
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
Submit Documentation Feedback
Copyright © 2006–2013, Texas Instruments Incorporated
Product Folder Links: LP3879



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