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BUT92 数据表(PDF) 2 Page - STMicroelectronics

部件名 BUT92
功能描述  FAST-SWITCHING POWER TRANSISTOR
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BUT92 数据表(HTML) 2 Page - STMicroelectronics

  BUT92 Datasheet HTML 1Page - STMicroelectronics BUT92 Datasheet HTML 2Page - STMicroelectronics BUT92 Datasheet HTML 3Page - STMicroelectronics BUT92 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.7
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 10
Ω)
VCE = VCEV
VCE = VCEV Tc = 100
o C
0.4
4
mA
mA
ICEV
Collector Cut-off
Current
VCE = VCEV VBE = -1.5V
VCE = VCEV VBE = -1.5V Tc = 100
oC
0.2
2
mA
mA
IEBO
Emitter Cut-off
Current (IC = 0)
VEB = 7 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC = 0.2 A
L = 25 mH
250
V
VEB0
Emitter-Base Voltage
(IC = 0)
IE = 50 mA
7
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 35 A
IB = 3.5 A
IC = 35 A
IB = 3.5 A
Tj = 100
oC
0.8
1.25
1.2
1.9
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 35 A
IB = 3.5 A
IC = 35 A
IB = 3.5 A
Tj = 100
oC
1.2
1.2
1.5
1.5
V
V
diC/dt
Rated of Rise on-state
Collector Current
VCC = 200V IB1 = 5.25 A RC = 0
tp = 3
µs
Tj = 100
oC
125
200
A/
µs
VCE(3µs)∗
Collector-Emitter
Dynamic Voltage
VCC = 200V
IB1 = 5.25 A
RC = 5.7
Ω
Tj = 100
oC
36
V
VCE(5µs)∗
Collector-Emitter
Dynamic Voltage
VCC = 200V
IB1 = 5.25 A
RC = 5.7
Ω
Tj = 100
oC
1.8
3
V
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ts
tf
tc
Storage Time
Fall Time
Crossover Time
VCC = 200 V
VClamp = 250 V
IC = 35 A
IB1 = 3.5 A
VBB = -5 V
LC = 0.28 mH
RB2 = 0.7
Ω
Tj = 100
oC
1.4
0.15
0.3
3
0.4
0.7
µs
µs
µs
VCEW
Maximum Collector
Emitter Voltage
without Snubber
VCC = 50 V
ICWoff = 52 A
VBB = -5 V
IB1 = 3.5 A
LC = 48
µH
RB2 = 0.7
Ω
Tj = 125
oC
250
V
* Pulsed : Pulse duration = 300
µs, duty cycle = 2%
BUT92
2/4



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