BUTW92 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

MAX

0.7

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = -1.5V)

VCE = 450 V

TC = 100

o C

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

µA

VCES

Collector-Emitter

Breakdown Voltage

(VEB =0)

IC = 5 mA

500

VEBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 50 mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB=0)

IC = 200 mA

250

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 60 A

IB = 15 A

IC = 60 A

IB = 15 A

TC = 100

0.8

1.1

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 60 A

IB = 15 A

IC = 60 A

IB = 15 A

TC = 100

1.9

hFE

∗

DC Current Gain

IC = 60 A

VCE = 3 V

IC = 60 A

VCE = 3 V TC = 100

IC = 5 A

VCE = 3 V

RESISTIVE LOAD

Storage Time

Fall Time

IC = 50 A

VCC = 250 V

IB1 = -IB2 = 10 A

1.2

250

1.4

300

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUTW92

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