BUV20 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

0.7

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEX

Collector Cut-off

Current (VBE = -1.5V)

VCE = 160 V

Tcase = 125

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 100 V

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 200 mA

L = 25 mH

125

V(BR)EB0

∗ Emitter-base

Breakdown Voltage

(IC = 0)

IE = 50 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 25 A

IB = 2.5 A

IC = 50 A

IB = 5 A

0.3

0.7

0.6

1.2

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 50 A

IB = 5 A

1.4

hFE

∗

DC Current Gain

VCE = 2 V

IC = 25 A

VCE = 4 V

IC = 50 A

Transition frequency

VCE = 15 V

IC = 2 A

f = 100 MHz

MHz

ton

RESISTIVE LOAD

Turn-on Time

Fall Time

Storage Time

IC = 50 A

IB1 = -IB2 = 5 A

1.5

0.3

1.2

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %.

BUV20

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