©2012 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FGPF15N60UNDF Rev. C2

September 2013

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Notes:

2: Mountde on 1” square PCB (FR4 or G-10 material)

Symbol

Description

Ratings

Unit

VCES

Collector to Emitter Voltage

600

V

VGES

Gate to Emitter Voltage

± 20

V

IC

Collector Current

@ TC = 25

oC30

A

Collector Current

@ TC = 100

oC15

A

ICM (1)

Pulsed Collector Current

@ TC = 25

oC

45

A

IF

Diode Forward Current

@ TC = 25

oC15

A

Diode Forward Current

@ TC = 100

oC7.5

A

PD

Maximum Power Dissipation

@ TC = 25

oC42

W

Maximum Power Dissipation

@ TC = 100

oC17

W

TJ

Operating Junction Temperature

-55 to +150

oC

Tstg

Storage Temperature Range

-55 to +150

oC

Symbol

Parameter

Typ.

Max.

Unit

RθJC(IGBT)

Thermal Resistance, Junction to Case

-

3.0

oC/W

RθJC(Diode)

Thermal Resistance, Junction to Case

-

4.9

oC/W

RθJA

Thermal Resistance, Junction to Ambient (PCB Mount)(2)

-

62.5

oC/W

FGPF15N60UNDF

600 V, 15 A

Short Circuit Rated IGBT

Features

• Short Circuit Rated 10us

• High Current Capability

• High Input Impedance

• Fast Switching

•RoHS Compliant

Applications

• Sewing Machine, CNC, Home Appliances, Motor Control

General Description

Using advanced NPT IGBT technology, Fairchild’s the NPT

IGBTs offer the optimum performance for low-power inverter-

driven applications where low-losses and short-circuit rugged-

ness features are essential, such as sewing machine, CNC,

motor control and home appliances.

G

C

E

TO-220F

(Retractable)

G C E