BUX10 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.17

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 100 V

1.5

ICEX

Collector Cut-off

Current

VCE = 160 V

VBE = -1.5V

Tcase = 125

VCE = 160 V

VBE = -1.5V

1.5

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = 200 mA

125

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 50 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 10 A

IB = 1 A

IC = 20 A

IB = 2 A

0.3

0.7

0.6

1.2

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 20 A

IB = 2 A

1.6

hFE

DC Current Gain

IC = 10 A

VCE = 2 V

IC = 20 A

VCE = 4 V

IS/b

Second Breakdown

Collector Current

VCE = 30 V

t = 1 s

VCE = 48 V

t = 1 s

Transistor Frequency

IC = 1 A

VCE =15 V

f = 10MHz

MHz

ton

Turn-on Time

IC = 20 A

IB1 = 2 A

VCC = 30V

0.5

1.5

µs

Storage Time

Fall Time

IC = 20 A

IB1 = - IB2 = 2A

VCC = 30V

0.6

0.15

1.2

0.3

µs

Clamped Es/b

Collector Current

Vclamp=125 V

L = 500

µH

∗ Pulsed: Pulse duration = 300µs, duty cycle

≤ 2 %

BUX10

2/4

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