BUX80 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.1

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 800 V

Tcase = 125

o C

IEBO

Emitter Cut-off Current

(IC = 0)

VBE = 10 V

VCEO(sus)

∗ Collector-Emitter

SustainingVoltage

(IB = 0)

IC = 100 mA

400

VCER(sus)

∗ Collector-Emitter

Sustaining

Voltage (RBE = 50

Ω)

IC = 100 mA

500

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 5 A

IB = 1 A

IC = 8 A

IB = 2.5 A

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 5 A

IB = 1 A

IC = 8 A

IB = 2.5 A

1.4

1.8

hFE

∗

DC Current Gain

IC = 1.2 A

VCE = 5 V

ton

Turn-on Time

IC = 5 A

IB1 = 1 A

VCC = 250 V

0.5

µs

Storage Time

IC = 5 A

IB1 = 1 A

IB2

= - 2 A

VCC= 250 V

3.5

µs

Fall Time

IC = 5 A

IB1 = 1 A

IB2

= - 2 A

VCC= - 250 V

0.5

µs

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %

BUX80

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