SP8J1

Transistors

Rev.A

1/4

4V Drive Pch+Pch MOS FET

SP8J1

Structure

External dimensions (Unit : mm)

Silicon P-channel MOS FET

Features

1) Low On-resistance. (40m

Ω at 4.5V)

2) High Power Package. (PD

=2.0W)

3) High speed switching.

4) Low voltage drive. (4 V)

Applications

Each lead has same dimensions

SOP8

5.0

1.27

0.2

1.75

(1)

(4)

(8)

(5)

0.4

1pin mark

Power switching

DC-DC converter

Packaging specifications

Inner circuit

Package

Code

Taping

Basic ordering unit (pieces)

SP8J1

TB

2500

Type

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2

∗1

(8)

(7)

(1)

(2)

∗2

∗1

(6)

(5)

(3)

(4)

Absolute maximum ratings (Ta=25

°C)

<It is the same ratings for Tr1 and Tr2.>

∗1

∗2

∗1

Parameter

V

VDSS

Symbol

V

VGSS

A

ID

A

IDP

A

IS

A

ISP

W

PD

°C

Tch

°C

Tstg

Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of Storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Source current

(Body diode)

−30

±20

±5.0

±20

−1.6

−20

2.0

150

−55 to +150

Limits

Thermal resistance

Parameter

°C / W

Rth(ch-a)

Symbol

Limits

Unit

Channel to ambient

∗ Mounted on a ceramic board.

62.5

∗