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BUZ72A 数据表(PDF) 3 Page - STMicroelectronics |
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BUZ72A 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit ISD ISD M Source-drain Current Source-drain Current (pulsed) 11 44 A A VSD ( ∗) Forward On Volt age ISD =22 A VGS =0 1.6 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ISD = 11 A di/dt = 100 A/ µs VDD =20 V Tj =150 oC 80 0.22 ns µC ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance Derating Curve Output Characteristics BUZ72A 3/7 |
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