STHS2375AM6F datasheet(13/20 Pages) STMICROELECTRONICS

13 / 20 page

STHS237x

Electrical parameters STHS237xA, STHS237xL

13/20

Table 6.

DC characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Detection

Offset current

DET open, VVDD = VRTN = 1.9V, measure

IVDD + IRTN

0.3

µA

Sleep current

DET open, VVDD = VRTN = 10.1V, measure

IVDD + IRTN

412

µA

IIL(DET)

DET pin leakage current VDET = VVDD = 57V, measure IDET

0.1

µA

IDET

Detection current

VRTN = VVDD, RDET = 24.9kΩ,

measure IVDD + IRTN + IDET

VVDD = 1.4V

53.7

58.3

µA

VVDD = 10.1V

395

410

417

µA

Classification

ICLASS

Classification current(1)

RCLASS = 4420Ω, VVDD = 13 to 21V

2.2

2.4

2.8

RCLASS = 953Ω, VVDD = 13 to 21V

10.3

10.6

11.3

RCLASS = 549Ω, VVDD = 13 to 21V

17.7

18.3

19.5

RCLASS = 357Ω, VVDD = 13 to 21V

27.1

28.0

29.5

RCLASS = 255Ω, VVDD = 13 to 21V

38.0

39.4

41.2

VCL(ON)

Classification lower

threshold

Regulator turns on, VVDD rising

10.2

11.3

13.0

VCU(OFF)

Classification upper

threshold

Regulator turns off, VVDD rising

21.9

VCU(H)

Hysteresis

0.5

0.78

IIL(CLASS)

CLASS pin leakage

current

VCLASS = 0V, VVDD = 57V

µA

Pass device

RDS(ON)

On resistance

IRTN = 300mA

0.72

1.0

IRTN(L)

RTN pin leakage current

VVDD = VRTN = 30V (VUVLO = 0V for

STHS2376x)

µA

ILIM(N)

Normal operation

current limit

VRTN = 1V

405

461

515

ILIM(I)

Inrush mode current

limit

VRTN = 2V, RILIM = 178kΩ

100

130

180

Inrush current

termination(2)

VRTN falling, RILIM = 178kΩ, inrush mode to

normal operation mode

100

Current rise time to

inrush(3)

RILIM = 69.8kΩ, VRTN-VSS = 5V, IRTN = 30 →

300mA, VVDD increasing past upper UVLO

µs

IIL(ILIM)

ILIM pin leakage current VVDD = 15V, VUVLO = 0V

µA

Power Good (PG)

VRTN(LO R)

RTN latch off voltage,

rising(4)

VRTN rising

9.5

10.0

10.5

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