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ADS5510IPAPR 数据表(PDF) 21 Page - Texas Instruments |
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ADS5510IPAPR 数据表(HTML) 21 Page - Texas Instruments |
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21 / 34 page ![]() www.ti.com R F R G V OCM INP INM CM R F R G R S 0.1mF 0.1mF 10mF 1mF R T +3.3V +5V 0.1mF 10mF - 5V THS4503 R IN R IN 10 W ADS5510 11-Bit / 125MSPS POWER-SUPPLY SEQUENCE AVDD REFP 29 28 2kW 1 W 1 F m POWER-DOWN ADS5510 SLAS499 – JANUARY 2007 Figure 27. Using the THS4503 with the ADS5510 The preferred power-up sequence is to ramp AVDD first, followed by DRVDD, including a simultaneous ramp of AVDD and DRVDD. In the event that DRVDD ramps up first in the system, care must be taken to ensure that AVDD ramps up within 10 ms. Optionally, it is recommended to put a 2-k Ω resistor from REFP (pin 29) to AVDD as shown in Figure 28. This helps to make the device more robust to power supply ramp-up timings. Figure 28. The device enters power-down in one of two ways: either by reducing the clock speed or by setting the PDN bit throughout the serial programming interface. Using the reduced clock speed, power-down may be initiated for clock frequency below 2 MSPS. The exact frequency at which the power down occurs varies from device to device. Using the serial interface PDN bit to power down the device places the outputs in a high-impedance state and only the internal reference remains on to reduce the power-up time. The power-down mode reduces power dissipation to approximately 180 mW. 21 Submit Documentation Feedback |
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