MB85R256F

DS501-00011-9v1-E

5



ELECTRICAL CHARACTERISTICS

1. DC Characteristics

(within recommended operating conditions)

*1: During the measurement of IDD, the Address and Data In were taken to only change once per active cycle.

Iout: output current

*2: All pins other than setting pins shall be input at the CMOS level voltages such as H  VDD, L  0 V.

Parameter

Symbol

Conditions

Value

Unit

Min

Typ

Max

Input leakage current

| ILI |

VIN  0 V to VDD





10



A

Output leakage

current

| ILO |

VOUT  0 V to VDD,

CE  VIH or OE  VIH





10



A

Operating power

supply current*1

IDD

CE  0.2 V,

Other inputs  VDD  0.2 V/0.2 V,

tRC (Min), Iout  0 mA



5

10

mA

Standby current*2

ISB

CE, WE, OE  VDD



5

50



A

High level input voltage

VIH

VDD = 2.7 V to 3.6 V

VDD  0.8



VDD  0.5

(  4.0)

V

Low level input voltage

VIL

VDD = 2.7 V to 3.6 V



0.5





0.6

V

High level output

voltage

VOH

IOH   2.0 mA

VDD  0.8





V

Low level output

voltage

VOL

IOL  2.0 mA





0.4

V