TSH80 datasheet(7/27 Pages) STMICROELECTRONICS

7 / 27 page

DocID009413 Rev 10

7/27

TSH80, TSH82

Electrical characteristics

Table 3. Electrical characteristics at VCC

+ = +5 V, V

- = GND, V

ic = 2.5 V, Tamb = 25 °C

(unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

|Vio|

Input offset voltage

Tamb = 25 °C

Tmin < Tamb < Tmax

1.1

∆V

io/∆T

Input offset voltage drift vs.

temperature

Tmin < Tamb < Tmax

µV/°C

Iio

Input offset current

Tamb = 25 °C

Tmin < Tamb < Tmax

0.1

3.5

µA

Iib

Input bias current

Tamb = 25 °C

Tmin < Tamb < Tmax

Cin

Input capacitance

0.3

ICC

Supply current per operator

Tamb = 25 °C

Tmin < Tamb < Tmax

8.2

10.5

11.5

CMR

Common mode rejection ratio

(

∆V

ic/∆Vio)

+0.1< Vic< 3.9 V and Vout = 2.5 V

Tamb = 25 °C

Tmin < Tamb < Tmax

SVR

Supply voltage rejection ratio

(

∆V

CC/∆Vio)

Tamb = 25 °C

Tmin < Tamb < Tmax

PSR

Power supply rejection ratio

(

∆V

CC/∆Vout)

Positive and negative rail

Avd

Large signal voltage gain

RL = 150 Ω connected to 1.5 V and

Vout = 1 V to 4 V

Tamb = 25 °C

Tmin < Tamb < Tmax

|Source|

Vid = +1, Vout connected to 1.5 V

Tamb = 25 °C

Tmin < Tamb < Tmax

Sink

Vid = -1, Vout connected to 1.5 V

Tamb = 25 °C

Tmin < Tamb < Tmax

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