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TS419IST 数据表(PDF) 30 Page - STMicroelectronics |
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TS419IST 数据表(HTML) 30 Page - STMicroelectronics |
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30 / 42 page ![]() POUT= VPEAK22RLW (6) Then, the average current delivered by the supply voltage is: IccAVG=2VPEAKπRLA (7) The power delivered by the supply voltage is Psupply = Vcc IccAVG (W) Then, the power dissipated by the amplifier is Pdiss = Psupply - Pout (W) Pdiss= 2 2VccπRL POUT−POUTW (8) and the maximum value is obtained when: ∂Pdiss ∂POUT=0 (9) and its value is: Pdissmax = 2VCC2π2RLW (10) Remark : This maximum value is only depending on power supply voltage and load values. The efficiency is the ratio between the output power and the power supply η= POUTPsupply=πVPEAK4VCC (11) The maximum theoretical value is reached when Vpeak = Vcc, so π4=78.5% (12) 5.5 Decoupling of the circuit Two capacitors are needed to bypass properly the TS419/TS421. A power supply bypass capacitor CS and a bias voltage bypass capacitor CB. CS has particular influence on the THD+N in the high frequency region (above 7 kHz) and an indirect influence on power supply disturbances. With 1 μF, you can expect similar THD+N performances to those shown in the datasheet. In the high frequency region, if CS is lower than 1 μF, it increases THD+N and disturbances on the power supply rail are less filtered. On the other hand, if CS is higher than 1 μF, those disturbances on the power supply rail are more filtered. CB has an influence on THD+N at lower frequencies, but its function is critical to the final result of PSRR (with input grounded and in the lower frequency region). If CB is lower than 1 μF, THD+N increases at lower frequencies and PSRR worsens. If CB is higher than 1 μF, the benefit on THD+N at lower frequencies is small, but the benefit to PSRR is substantial. Note: that CIN has a non-negligible effect on PSRR at lower frequencies. The lower the value of CIN, the higher the PSRR. TS419, TS421 Application information DS3048 - Rev 7 page 30/42 |
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