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TS4990IST 数据表(PDF) 20 Page - STMicroelectronics |
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TS4990IST 数据表(HTML) 20 Page - STMicroelectronics |
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20 / 33 page ![]() Application information TS4990 20/33 DocID9309 Rev 14 Therefore, the power dissipated by each amplifier is: Pdiss = Psupply - Pout (W) and the maximum value is obtained when: and its value is: Note: This maximum value is only dependent on power supply voltage and load values. The efficiency is the ratio between the output power and the power supply: The maximum theoretical value is reached when VPEAK = VCC, so: 4.5 Decoupling of the circuit Two capacitors are needed to correctly bypass the TS4990: a power supply bypass capacitor Cs and a bias voltage bypass capacitor Cb. Cs has particular influence on the THD+N in the high frequency region (above 7 kHz) and an indirect influence on power supply disturbances. With a value for Cs of 1 µF, you can expect THD+N levels similar to those shown in the datasheet. In the high frequency region, if Cs is lower than 1 µF, it increases THD+N and disturbances on the power supply rail are less filtered. On the other hand, if Cs is higher than 1 µF, those disturbances on the power supply rail are more filtered. Cb has an influence on THD+N at lower frequencies, but its function is critical to the final result of PSRR (with input grounded and in the lower frequency region). If Cb is lower than 1 µF, THD+N increases at lower frequencies and PSRR worsens. If Cb is higher than 1 µF, the benefit on THD+N at lower frequencies is small, but the benefit to PSRR is substantial. Note that Cin has a non-negligible effect on PSRR at lower frequencies. The lower the value of Cin, the higher the PSRR. P diss 22V CC R L ---------------------- P out Pout – = P diss P out ------------------ = 0 P diss max 2V CC 2 2 R L --------------- (W) = = P out P supply ------------------- = V PEAK 4V CC ----------------------- 4 ----- = 78.5% |
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