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TS514

Electrical characteristics

16

3

Electrical characteristics

Table 3. Electrical characteristics at VCC = ±15 V, Tamb = 25 °C

(unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

ICC

Supply current (per operator)

at Tmin ≤ Top ≤ Tmax

0.5

0.6

0.75

mA

Iib

Input bias current

– at 25 °C

– at Tmin ≤ Top ≤ Tmax

50

150

300

nA

Ri

Input resistance, F= 1 kHz

1

M

Ω

Vio

Input offset voltage

– at 25 °C

TS514

TS514A

– at Tmin ≤ Top ≤ Tmax

TS514

TS514A

0.5

2.5

0.5

4

1.5

mV

∆V

io

Input offset voltage drift at Tmin ≤ Top ≤ Tmax

5

µV/°C

Iio

Input offset current

at 25 °C

at Tmin ≤ Top ≤ Tmax

5

20

40

nA

∆I

io

Input offset current drift

Tmin ≤ Top ≤ Tmax

0.08

Ios

Output short-circuit current

23

mA

Avd

Large signal voltage gain, RL = 2 kΩ

VCC = ±15 V, at Tmin ≤ Top ≤ Tmax

VCC = ± 4 V

90

100

95

dB

GBP

Gain bandwidth product, F = 100 kHz

1.8

3

MHz

en

Equivalent input noise voltage, F = 1 kHz

Rs = 50

Ω

Rs = 1 k

Ω

Rs = 10 k

Ω

8

10

18

15

THD

Total harmonic distortion

Av = 20 dB, RL = 2 kΩ, Vo = 2 Vpp, f = 1 kHz

0.03

0.1

%

±Vopp

Output voltage swing, RL = 2 kΩ

VCC = ±15 V, at Tmin ≤ Top ≤ Tmax

VCC = ± 4 V

±13

±3

V

Vopp

Large signal voltage swing, RL = 2 kΩ, F = 10 kHz

28

Vpp

SR

Slew rate, unity gain, RL = 2 kΩ

0.8

1.5

V/

µs

CMR

Common mode rejection ratio

CMR = 20 log (

∆V

ic/∆Vio)

(Vic = -10 V to 10 V, Vout = VCC/2, RL > 1 MΩ)

90

dB

nA

°C

-------

nV

Hz

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