TSC2010H datasheet(5/49 Pages) STMICROELECTRONICS

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Electrical characteristics

Table 4. Electrical characteristics Vcc = 2.7 V, Vicm = 12 V, T = 25 °C (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Power supply

Icc

Current consumption

Vicm = -20 to 70 V

Tmin < T < Tmax

1.5

2.3

Current consumption with

shutdown active

Vicm = -20 to 70 V

Tmin < T < Tmax

150

µA

Input

|Vos|

Offset voltage (RTI) (1)

Vicm = 1 V

Tmin < T < Tmax

200

825

µV

Vicm = 12 V

Tmin < T < Tmax

500

1300

|ΔVos/ΔT|

Offset drift vs. temperature

Vicm = 1 V, Tmin < T < Tmax

µV/°C

Vicm = 12 V, Tmin < T < Tmax

CMR

Common mode rejection

Vicm = -20 to 70 V, DC mode

Tmin < T < Tmax

115

Iib+

Input bias current

Vicm = 12 V

Tmin < T < Tmax, Vicm = -20 to 70 V

-400

350

600

µA

Iib-

Input bias current

Vicm = 12 V

Tmin < T < Tmax, Vicm= -20 to 70 V

-150

100

350

|Vsense|

Vsense operating range with

Eg ≤ 0.3% (2)

TSC2010H

Tmin < T < Tmax

123.6

122.4

TSC2011H

Tmin < T < Tmax

40.5

39.3

TSC2012H

Tmin < T < Tmax

23.9

22.7

Output

Gain

TSC2010H

V/V

TSC2011H

TSC2012H

100

Gain error vs. temperature

ΔVout = 100 mV to (Vcc - 100 mV)

Tmin < T < Tmax

0.3

ΔEg/ΔT

Gain error drift

Tmin < T < Tmax

ppm/°C

NLE

Linearity error

Vicm = 12 V

0.03

Vcc - Voh

Drop voltage output high

Isource = 0.2 mA

Tmin < T < Tmax

TSC2010H, TSC2011H, TSC2012H

Electrical characteristics

DS13791 - Rev 2

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