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APT90DR160HJ 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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APT90DR160HJ 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISUM6114 eq APT90DR160HJ Rectifier Diode Full Bridge Power Module www.iscsemi.com 1 FEATURES · Planar double Passivated Chips · High Blocking Voltage · Low Leakage Current · Very Low Stray Inductance · High Current APPLICATIONS · Input Mains Rectifier · Uninterruptible Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VR Maximum DC reverse Voltage 1600 V VRRM Max. Repetitive Reverse Blocking Voltage 1600 V IF DC Forward Current,TC= 90℃ 80 A IFSM Non-Repetitive Forward Surge Current, t = 10 ms, TJ=45℃ 850 A Rth j-c Thermal Resistance,Junction to Case 0.85 ℃ /W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ Visol Insulation test voltage, t = 1min 2500 V |
类似零件编号 - APT90DR160HJ |
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类似说明 - APT90DR160HJ |
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