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GC05MPS33J 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 GC05MPS33J
功能描述  Silicon Carbide Schottky Diode
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

GC05MPS33J 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  GC05MPS33J Datasheet HTML 1Page - Inchange Semiconductor Company Limited GC05MPS33J Datasheet HTML 2Page - Inchange Semiconductor Company Limited GC05MPS33J Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISCD7061
eq GC05MPS33J
Silicon Carbide Schottky Diode
www.iscsemi.com
1
FEATURES
· Enhanced Surge and Avalanche Robustness
· Low VF for High Temperature Operation
· Low Thermal Resistance
· Temperature Independent Fast Switching
APPLICATIONS
· Pulsed Power
· Hihg Voltage Switching
· High Frequency Rectifiers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitisve Peak Reverse Voltage
3300
V
IF
Continuous Forward Current
Tc=100°C
11
A
Tc=135°C
8
Tc=157°C
5
IFSM
Non-Repetitive Forward Surge Current
Tc=25°C,Tp=10ms,Half Sine Pulse
50
A
Tc=150°C,Tp=10ms,Half Sine Pulse
40
IFRM
Repetitive Peak Forward Surge
Current
Tc=25°C,Tp=10ms,Half Sine Pulse
30
A
Tc=150°C,Tp=10ms,Half Sine Pulse
21
dv/dt
Maximum Rate of Voltage Change
VR= 0-2640V
200
V/ns
Ptot
Power Dissipation
Tc=25°C
178
W
TJ
Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃
A
K
Case(K)


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