数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

STA510F 数据表(PDF) 6 Page - STMicroelectronics

部件名 STA510F
功能描述  44 V, 5.5 A, quad power half-bridge
PDF  26 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STA510F 数据表(HTML) 6 Page - STMicroelectronics

Back Button STA510F Datasheet HTML 2Page - STMicroelectronics STA510F Datasheet HTML 3Page - STMicroelectronics STA510F Datasheet HTML 4Page - STMicroelectronics STA510F Datasheet HTML 5Page - STMicroelectronics STA510F Datasheet HTML 6Page - STMicroelectronics STA510F Datasheet HTML 7Page - STMicroelectronics STA510F Datasheet HTML 8Page - STMicroelectronics STA510F Datasheet HTML 9Page - STMicroelectronics STA510F Datasheet HTML 10Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 6 / 26 page
background image
Electrical specifications
STA510F
6/26
DocID014268 Rev 5
3
Electrical specifications
3.1
Absolute maximum ratings
3.2
Thermal data
3.3
Electrical specifications
The results in Table 6 below are given for the conditions: VL = 3.3 V, VCC = 37 V and
T = 25 °C unless otherwise specified.
Table 4. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC
DC supply voltage (pin 4, 7, 12, 15)
44
V
Vmax
Maximum voltage on pins 23 to 32
5.5
V
ESD
Max ESD on pins (HBM)
±1000
V
Top
Operating temperature range
0 to 70
°C
Tstg, Tj
Storage and junction temperature
-40 to 150
°C
Table 5. Thermal data
Symbol
Parameter
Min.
Typ.
Max.
Unit
Tj-case
Thermal resistance junction to case (thermal pad)
1
2.5
°C/W
TjSD
Thermal shut-down junction temperature
150
°C
Twarn
Thermal warning temperature
130
°C
thSD
Thermal shutdown hysteresis
25
°C
Table 6. Electrical specifications
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
RdsON
Power P-channel/N-channel
MOSFET RDS(on)
Id = 1 A
150
200
m
Ω
Idss
Power P-channel/N-channel leakage
current
100
μA
gN
Power P-channel RDS(on) matching
Id = 1 A
95
%
gP
Power N-channel RDS(on) matching
Id = 1 A
95
%
Dt_s
Low current deadtime (static)
See test circuit Figure 3
10
20
ns
Dt_d
High current deadtime (dynamic)
L = 22 µH, C = 470 nF,
RL = 8 Ω, Id = 4.5 A,
see test circuit Figure 4
50
ns
td ON
Turn-on delay time
Resistive load
100
ns



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com