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BYT60P-400. 数据表(PDF) 3 Page - STMicroelectronics |
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BYT60P-400. 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() BYT60P-400 / BYT260PIV-400 / BYT261PIV-400 3/7 0 102030 4050607080 0 10 20 30 40 50 60 70 80 90 100 110 IF(av) (A) PF(av)(W) δ =1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 T δ=tp/T tp Fig. 1: Average forward power dissipation versus average forward current (per diode, for ISOTOP). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350 IM(A) δ P=100W P=75W P=25W P=50W T δ=tp/T tp Fig. 2: Peak current versus form factor (per diode, for ISOTOP). 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 Tamb( °C) IF(av)(A) Rth(j-a)=2.5 °C/W Rth(j-a)=Rth(j-c) ISOTOP SOD93 T δ=tp/T tp Fig. 3: Average forward current versus ambient temperature ( δ=0.5, per diode for ISOTOP). 1E-3 1E-2 1E-1 1E+0 0 50 100 150 200 250 300 350 400 450 t(s) IM(A) Tc=75 °C Tc=50 °C Tc=25 °C IM t δ=0.5 Fig. 4-1: Non repetitive surge peak forward current versus overload duration (SOD93). 1E-3 1E-2 1E-1 1E+0 0 50 100 150 200 250 300 350 400 Tc=75 °C Tc=50 °C Tc=25 °C t(s) IM(A) IM t δ=0.5 Fig. 4-2: Non repetitive surge peak forward current versus overload duration (per diode, for ISOTOP). |
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