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BYV1060 数据表(PDF) 1 Page - STMicroelectronics |
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BYV1060 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  ® BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu- ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre- quency circuits. August 1999 Ed: 1A DO 41 (Glass) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 60 V IF(AV) Average Forward Current* Tamb = 25 °C 1A IFSM Surge non Repetitive Forward Current Tamb = 25 °C tp = 10ms 20 Sinusoidal Pulse A Tamb = 25 °C tp = 300 µs 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range - 65 to + 150 - 65 to + 125 °C °C TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case 230 °C ABSOLUTE RATINGS (limiting values) Symbol Test Conditions Value Unit Rth(j-a) Junction-ambient* 110 °C/W * On infinite heatsink with 4mm lead length THERMAL RESISTANCE 1/4 |
类似零件编号 - BYV1060 |
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类似说明 - BYV1060 |
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