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BYV255V 数据表(PDF) 3 Page - STMicroelectronics |
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BYV255V 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() BYV255V 3/5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350 400 450 500 P=100W P=70W P=40W P=20W T I M =tp/T tp IM(A) Fig.2 : Peak current versus form factor. Tj=125 C o IFM(A) 1 10 100 1000 VFM(V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Fig.3 : Forward voltage drop versus forward current (maximum values). 0.1 1.0 0.2 0.5 Zth(j-c) (tp. ) K= Rth(j-c) =0 . 5 =0 . 2 =0 . 1 Single pulse tp(s) T =t p/T tp 1.0E-03 1.0E-02 1.0E-01 1. 0E+0 0 K Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 0 204060 80 100 120 0 10 20 30 40 50 60 70 80 90 100 110 120 =0.05 =0.1 =0.2 =0.5 T =tp/T tp IF(av)(A) P F(av)(W) =1 Fig.1 : Average forward power dissipation versus average forward current. 0 20406080 100 120 140 160 0 20 40 60 80 100 120 T =tp/T tp =0.5 F(av)(A) I o Tamb( C) Rth(j-a)=Rth(j-c) Fig.6 : Average current versus ambient temperature. (duty cycle : 0.5) 0.001 0.01 0.1 1 0 100 200 300 400 500 600 700 800 900 1000 I M(A) IM t =0.5 t(s) Tc=25 C o Tc=110 C o Tc=75 C o Fig.5 : Non repetitive surge peak forward current versus overload duration. |
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