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L6390 数据表(PDF) 10 Page - STMicroelectronics |
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L6390 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 25 page ![]() Electrical characteristics L6390 10/25 DocID14493 Rev 11 Driving buffers section Iso 11, 15 High/low-side source short- circuit current VIN = Vih (tp < 10 s) 200 290 - mA Isi High/low-side sink short- circuit current VIN = Vil (tp < 10 s) 250 430 - mA Logic inputs Vil 1, 2, 3 Low level logic threshold voltage - 0.8 - 1.1 V Vih High level logic threshold voltage -1.9 - 2.25 V Vil_S 1, 3 Single input voltage LIN and HIN connected together and floating -- 0.8 V IHINh 3 HIN logic “1” input bias current HIN = 15 V 110 175 260 A IHINl HIN logic “0” input bias current HIN = 0 V - - 1 A ILINl 1 LIN logic “0” input bias current LIN = 0 V 3 6 20 A ILINh LIN logic “1” input bias current LIN = 15 V - - 1 A ISDh 2 SD logic “1” input bias current SD = 15 V 10 40 100 A ISDl SD logic “0” input bias current SD = 0 V - - 1 A RPD_SD 2SD input pull-down resistor SD = 15 V 150 375 1500 k 1. VBO = VBOOT - VOUT. 2. RDSON is tested in the following way: RDSON = [(VCC - VBOOT1) - (VCC - VBOOT2)] / [I1(VCC,VBOOT1) - I2(VCC,VBOOT2)] where I1 is the pin 16 current when VBOOT = VBOOT1, I2 when VBOOT = VBOOT2. Table 6. DC operation electrical characteristics (VCC = 15 V; TJ = + 25 °C) (continued) Symbol Pin Parameter Test condition Min. Typ. Max. Unit |
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