BYW99P datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

IR *

Tj =25

°CVR =VRRM

µA

Tj = 100

°C

1.5

VF**

Tj = 125

°CIF =12 A

0.85

Tj = 125

°CIF =25 A

1.05

Tj =25

°CIF =25 A

1.15

Pulse test : * tp = 5 ms,

δ <2 %

** tp = 380

µs, δ <2 %

To evaluate the conduction losses use the following equation :

P = 0.65 x IF(AV) + 0.016 x IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (Per diode)

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

trr

Tj =25

°CIF = 0.5A

IR =1A

Irr = 0.25A

IF =1A

VR = 30V

dIF/dt = -50A/

µs40

tfr

Tj =25

°CIF =1A

VFR = 1.1 x VF

tr = 10 ns

VFP

Tj =25

°CIF = 1A

tr = 10 ns

RECOVERY CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

SOT93 / TO247

Per diode

1.8

°C/W

Total

1.0

TOP3I

Per diode

2.0

Total

1.25

Rth (c)

Coupling

SOT93 / TO247

0.2

°C/W

TOP3I

0.5

When the diodes 1 and 2 are used simultaneously :

Tj-Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)

THERMAL RESISTANCES

BYW99P/PI/W

2/6

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