©2006 Fairchild Semiconductor Corporation

FDMS5672 Rev.1.2

www.fairchildsemi.com

1

FDMS5672

N-Channel UltraFET Trench® MOSFET

60V, 22A, 11.5m

Ω

Features

Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A

Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A

Typ Qg = 32nC at VGS = 10V

Low Miller Charge

Optimized Efficiency at High Frequencies

RoHS Compliant

General Description

UItraFET

devices

combine

characteristics

that

enable

benchmark efficiency in power conversion applications.

Optimized for rDS(on), low ESR, low total and Miller gate charge,

these devices are ideal for high frequency DC to DC converters.

Application

DC - DC Conversion

MOSFET Maximum Ratings T

A = 25°C unless otherwise noted.

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

60

V

VGS

Gate to Source Voltage

±20

V

ID

TC = 25°C

65

A

TC

-Continuous

TA = 25°C

(Note 1a)

10.6

EAS

PD

Power Dissipation

TC = 25°C

78

W

Power Dissipation

TA = 25°C

(Note 1a)

2.5

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction to Case

1.6

°C/W

RθJA

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS5672

FDMS5672

Power 56

13’’

12mm

3000 units

G

S

S

S

Pin 1

Power 56 (Bottom view)

D

D

D

D

4

3

2

1

5

6

7

8

G

S

S

S

D

D

D

D

March 2015

Drain Current -Continuous

-Continuous

= 100°C

39

-Pulsed

176

337

mJ

Single Pulse Avalanche Energy

(Note 3)

(Note 4)

(Note 5)

(Note 5)