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L5963DN-EHT 数据表(PDF) 17 Page - STMicroelectronics |
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L5963DN-EHT 数据表(HTML) 17 Page - STMicroelectronics |
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17 / 49 page ![]() DocID028553 Rev 3 17/49 L5963 Electrical specifications 48 IlimSW1 Peak current limitation on sw1 - 2.5 3 3.5 A IlimSW2 Peak current limitation on sw2 - 3 3.5 4 A fsw Free-run switching frequency - 225 250 275 kHz fsync Switching frequency range(3) 50% duty-cycle wave on SYNC pin 250 - 2000 kHz RonHS High side MOS on resistance(3) VINSWx > 3.5 V; including bonding wires -85- mΩ RonLS Low side MOS on resistance(3) Including bonding wires - 105 - mΩ Efficiency(3) Free run frequency VOUTSW1/2 = 5 V; Iload = 2.5 A VOUTSW1/2 = 5 V; Iload = 1 A -90 93 -% ΔVFBSWx / Δt FB pin slope at turn-on(3) Including bonding wires - 0.95 - V/ms TSDSWx Thermal shutdown temperature Temperature rising 150 160 - °C HysTSDSWx Hysteresis on thermal shutdown temperature - 5 - 15 °C THRSW1OK / VFBSW1 SW1OK threshold as percentage of FBSW1 voltage - 919497 % HysSW1OK Hysteresis on SW1OK - - 35 50 mV VmaxSW1OK SW1OK saturation voltage I = 1 mA in SW1OK pin - - 0.2 V TglitchSW1OK Glitch filter time for SW1-OK - 9 13 17 μs ISW1OKDLY SW1OKDLY output current - 6 10 13 μA THRSW1OKDLY SW1OKDLY threshold - 2 2.2 2.4 V ton-min Minimum on time(3) - - 20 - ns High side driver VdropHSD Output saturation Iload = 0.5 A - 140 170 mV IshortHSD Short circuit current limit - 0.7 1 1.3 A TSDHSD Thermal shut-down temperature Temperature rising 150 160 - °C HysTSDHSD Hysteresis on thermal shutdown temperature - 5 - 15 °C 1. Not tested at ATE. 2. Tests involving switching frequencies higher than 1 MHz are guaranteed by design. 3. Test guaranteed by application measurements. Table 7. Electrical characteristics (continued) Symbol Parameter Test conditions Min Typ Max Unit |
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