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CSD97396Q4M 数据表(PDF) 9 Page - Texas Instruments |
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CSD97396Q4M 数据表(HTML) 9 Page - Texas Instruments |
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9 / 20 page ![]() CSD97396Q4M www.ti.com SLPS572 – DECEMBER 2015 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The Power Stage CSD97396Q4M is a highly optimized design for synchronous buck applications using NexFET devices with a 5 V gate drive. The Control FET and Sync FET silicon are parametrically tuned to yield the lowest power loss and highest system efficiency. As a result, a rating method is used that is tailored towards a more systems centric environment. The high-performance gate driver IC integrated in the package helps minimize the parasitics and results in extremely fast switching of the power MOSFETs. System level performance curves such as Power Loss, SOA, and normalized graphs allow engineers to predict the product performance in the actual application. 8.2 Typical Application Figure 3. Application Schematic Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 9 |
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