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DALC112S1 数据表(PDF) 1 Page - STMicroelectronics |
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DALC112S1 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 3 page ![]() DALC112S1 ® January 1998 - Ed: 4 IEC 1000-4-2level 3 8 kV (air discharge) 6 kV (contactdischarge) COMPLIESWITH THE FOLLOWINGSTANDARDS : ARRAYOF 12 DIODESFOR ESD PROTECTION. PEAK REVERSE VOLTAGE VRRM= 18V PER DIODE. VERYLOWCAPACITANCE PER DIODE: C < 5pF. VERY LOW LEAKAGE CURRENT : IR <2 µA. FEATURES SO8 FUNCTIONAL DIAGRAM I/O 5 I/O 6 I/O 1 I/O 2 I/O 3 I/O 4 REF 1 REF 2 LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION Application Specific Discretes A.S.D. TM Where ESD protection for high speed datalines is required : LAN / WAN equipment Computer I/O Graphic video port Set top box I/O MAIN APPLICATIONS ARRAY of 12 diodes configured by cells of 2 diodes, each cell being used to protect signal line from transient overvoltages by clamping action. Its very low capacitance allows to protect fast signals with no distortion. It is particularly suited for the protection of graphic video ports. DESCRIPTION 1/3 |
类似零件编号 - DALC112S1 |
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类似说明 - DALC112S1 |
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