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DALC112S1RL 数据表(PDF) 2 Page - STMicroelectronics |
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DALC112S1RL 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 3 page ![]() Symbol Parameter Value Unit VRRM Peak reverse voltage per diode 18 V Tstg Tj Storage temperature range Maximum junction temperature -55 to + 150 150 °C °C ABSOLUTE MAXIMUM RATINGS (Tamb =25 °C). Symbol Parameter Typ. Max. Unit VF Forward voltage IF = 50 mA 1.3 V IR Reverse leakage current per diode VR =15 V 2 µA C Input capacitance between Line and GND Vcc = 5 V, VRMS = 30 mV, F = 1 MHz (see figure 1 below) 7pF ELECTRICAL CHARACTERISTICS (Tamb =25 °C). TYPICAL APPLICATION Vcc DALC112S1 Fig 1 : Input capacitance measurement +VCC connected between REF1 and REF2 Input applied : Vcc = 5V, VRMS = 30 mV, F =1MHz G I/O V CC REF2 REF1 DALC112S1 2/3 |
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