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VNH5019ATR-E 数据表(PDF) 13 Page - STMicroelectronics |
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VNH5019ATR-E 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 38 page ![]() DocID15701 Rev 11 13/38 VNH5019A-E Electrical specifications 38 TTSD_LS Low-side thermal shutdown temperature VIN = 0 V 150 175 200 °C TTR(3) Thermal reset temperature 135 °C THYST(3) Thermal hysteresis 7 15 °C 1. The device is able to pass the ESD and ISO pulse requirements as specified in the Table 15. 2. TTSD is the minimum threshold temperature between HS and LS 3. Valid for both HSD and LSD Table 9. Protection and diagnostic (continued) Symbol Parameter Test conditions Min Typ Max Unit Table 10. Current sense (8 V < VCC < 21 V) Symbol Parameter Test conditions Min Typ Max Unit K0 IOUT/ISENSE IOUT = 3 A, VSENSE = 0.5 V, Tj = - 40 °C to 150°C 4670 7110 10110 dK0/K0 Analog current sense ratio drift IOUT = 3 A; VSENSE = 0.5 V, Tj = -40 °C to 150 °C -19 19 % K1 IOUT/ISENSE IOUT = 8 A,VSENSE = 1.3V, Tj = - 40 °C to 150°C 6060 7030 8330 dK1/K1 Analog current sense ratio drift IOUT = 8 A; VSENSE = 1.3V, Tj = -40 °C to 150 °C -14 14 % K2 IOUT/ISENSE IOUT = 15 AVSENSE = 2.4 V, Tj = - 40 °C to 150°C 6070 6990 7810 dK2/K2 Analog current sense ratio drift IOUT = 15 A; VSENSE = 2.4 V, Tj = -40 °C to 150 °C -12 12 % K3 IOUT/ISENSE IOUT = 25 AVSENSE = 4 V, Tj = - 40 °C to 150°C 6000 6940 7650 dK3/K3 Analog current sense ratio drift IOUT =25 A; VSENSE = 4 V, Tj = -40 °C to 150 °C -12 12 % VSENSE Max analog sense output voltage IOUT = 15 A, RSENSE = 1.1 k 5V ISENSEO Analog sense leakage current IOUT = 0 A, VSENSE = 0 V, VCSD = 5 V, VIN = 0 V, Tj = - 40 to 150°C 05 μA IOUT = 0 A, VSENSE = 0 V, VCSD = 0 V, VIN = 5 V, Tj = - 40 to 150°C 0 100 tDSENSEH Delay response time from falling edge of CS_DIS pin VIN = 5 V, VSENSE < 4 V, IOUT = 8 A, ISENSE = 90% of ISENSEmax (see fig Figure 13) 50 μs tDSENSEL Delay response time from rising edge of CS_DIS pin VIN = 5 V, VSENSE < 4 V, IOUT = 8 A, ISENSE = 10% of ISENSEmax (see fig Figure 13) 20 μs |
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