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DA112S 数据表(PDF) 2 Page - STMicroelectronics |
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DA112S 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() Symbol Parameter Value Unit VRRM Repetitivepeak reverse voltage(for one single diode) 18 V IPP Repetitive peak forward current * 8/20 µs12 A P Power dissipation 0.73 W Tstg Tj Storage temperature range Maximum operating junction temperature - 55 to + 150 150 °C TL Maximum lead temperature for soldering during 10s. 260 °C * The surge is repeated after the device returns to ambient temperature ABSOLUTE MAXIMUM RATINGS (Tamb =25 °C) Symbol Parameter Value Unit Rth (j-a) Junction to ambient 170 °C/W THERMAL RESISTANCES Symbol Parameter Max. Unit VFP Peak forward voltage IPP = 12A, 8/20 µs DA108S1 DA112S1 9 12 V VF Forward voltage IF = 50 mA 1.2 V IR Reverse leakage current VR = 15V 2 µA ELECTRICAL CHARACTERISTICS (Tamb =25 °C) ® DA108S1 / DA112S1 2/5 |
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