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DB4 数据表(PDF) 2 Page - STMicroelectronics |
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DB4 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() Symbol Parameter Test Conditions Value Unit DB3 DC34 DB4 VBO Breakover voltage * C = 22nF ** see diagram 1 MIN 28 30 35 V TYP 32 34 40 MAX 36 38 45 [I+VBOI-I-VBOI] Breakover voltage symmetry C = 22nF ** see diagram 1 MAX ± 3V I ∆V± I Dynamic breakover voltage * ∆I= [IBO to IF=10mA] see diagram 1 MIN 5 V VO Output voltage * see diagram 2 MIN 5 V IBO Breakover current * C = 22nF ** MAX 100 50 100 µA tr Rise time * see diagram 3 TYP 1.5 µs IB Leakage current * VB =0.5 VBO max see diagram 1 MAX 10 µA * Electrical characteristic applicable in both forward and reverse directions. ** Connected in parallel with the devices. ELECTRICAL CHARACTERISTICS (Tj = 25 °C) DIAGRAM 1 : Current-voltage characteristics DIAGRAM 2 : Test circuit for output voltage DIAGRAM 3 : Test circuit see diagram 2. Adjust R for lp=0.5A 10mA IBO IB -V + V +I F -IF 0,5 VBO VBO V 10 k 500 k 220 V 50 Hz 0.1 F D.U.T V O R= 20 90 % lp 10 % tr ® DB3 / DB4 / DC34 2/4 |
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