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DMV 数据表(PDF) 6 Page - STMicroelectronics |
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DMV 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 9 page ![]() 1E-3 1E-2 1E-1 1E+0 0 5 10 15 20 25 30 35 40 IM(A) Tc=100°C DMV16 DMV32/DMV56 IM t δ=0.5 t(s) Fig. 5-2: Non repetitive surge peak forward current versus overload duration (modulation diode). 1E-3 1E-2 1E-1 1E+0 0 5 10 15 20 25 30 35 40 45 IM(A) Tc=100°C DMV56 DMV32 DMV16 t(s) IM t δ=0.5 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (damper diode). 0.1 0.2 0.5 1.0 2.0 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Qrr(µC) IF=IF(av) 90% confidence Tj=125°C DMV56 DMV32 DMV16 dIF/dt(A/µs) Fig. 6-1: Reverse recovery charges versus dIF/dt (damper diode). 0.1 1.0 10.0 50.0 0 50 100 150 200 250 300 350 400 450 500 Qrr(nC) IF=IF(av) 90% confidence Tj=125°C DMV32/DMV56 DMV16 dIF/dt(A/µs) Fig. 6-2: Reverse recovery charges versus dIF/dt (modulation diode). 0.1 0.2 0.5 1.0 2.0 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IRM(A) IF=IF(av) 90% confidence Tj=125°C DMV16 DMV32 DMV56 dIF/dt(A/µs) Fig. 7-1: Reverse recovery current versus dIF/dt (damper diode). 0.1 1.0 10.0 100.0 0 1 2 3 4 5 6 7 8 9 10 IRM(A) IF=IF(av) 90% confidence Tj=125°C DMV32/DMV56 DMV16 dIF/dt(A/µs) Fig. 7-2: Reverse recovery current versus dIF/dt (modulation diode). ® DMV series 6/9 |
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