0

20

40

60

80

100

120

140

300

350

400

450

500

550

600

650

700

tfr(ns)

dIF/dt(A/µs)

IF=Ip

90% confidence

Tj=125°C

DTV56

DTV82

DTV110

Fig. 8-2: Forward recovery time versus dIF/dt.

0

20

40

60

80

100

120

140

400

450

500

550

600

650

700

750

800

tfr(ns)

dIF/dt(A/µs)

IF=Ip

90% confidence

Tj=125°C

DTV32

DTV64

DTV16

DTV16

DTV16

Fig. 8.1: Forward recovery time versus dIF/dt.

0

20

40

60

80

100

120

140

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Tj(°C)

VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C]

VFP

IRM

Qrr

Fig. 9: Dynamic parameters versus junction

temperature.

1

1

10

100

200

10

100

200

C(pF)

Tj=25°C

F=1MHz

VR(V)

DTV110

DTV16

DTV16

DTV16

DTV82

DTV64

DTV56

DTV32

Fig. 10: Junction capacitance versus reverse

voltage applied (typical values).

1E-2

1E-1

1E+0

1E+1

0.1

0.2

0.5

1.0

tp(s)

K=[Zth(j-c)/Rth(j-c)]

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

T

tp

Fig. 11-1: Relative variation of thermal impedance

junction

to

case

versus

pulse

duration

(ISOWATT220AC).

1E-3

1E-2

1E-1

1E+0

0.1

0.2

0.5

1.0

tp(s)

K=[Zth(j-c)/Rth(j-c)]

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

T

tp

Fig. 12-2: Relative variation of thermal impedance

junction

to

case

versus

pulse

duration

(TO-220AC).

DTVseries

8/10