4

INA188

SBOS632 – SEPTEMBER 2015

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Copyright © 2015, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails must be

current limited to 10 mA or less.

(3)

Short-circuit to ground.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage

Supply

±20

V

40 (single supply)

Current

±10

mA

Analog input range(2)

(V–) – 0.5

(V+) + 0.5

V

Output short-circuit(3)

Continuous

Temperature

Operating range, TA

–55

150

°C

Junction, TJ

150

Storage temperature, Tstg

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VS

Supply voltage

4 (±2)

36 (±18)

V

Specified temperature

-40

125

°C

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.4 Thermal Information

THERMAL METRIC(1)

INA188

UNIT

D (SOIC)

DRG (WSON)

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

125

145

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

80

75

°C/W

RθJB

Junction-to-board thermal resistance

68

39

°C/W

ψJT

Junction-to-top characterization parameter

32

14

°C/W

ψJB

Junction-to-board characterization parameter

68

105

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W