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TDA7563ASM 数据表(PDF) 7 Page - STMicroelectronics |
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TDA7563ASM 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 35 page ![]() DocID14407 Rev 5 7/35 TDA7563A Electrical specifications 34 2 Electrical specifications 2.1 Absolute maximum ratings 2.2 Thermal data 2.3 Electrical characteristics Refer to the test circuit, VS = 14.4 V; f = 1 kHz; RL = 4 Ω; Tamb= 25 °C unless otherwise specified. Table 2. Absolute maximum ratings Symbol Parameter Value Unit Vop Operating supply voltage 18 V VS DC supply voltage 28 V Vpeak Peak supply voltage (for t = 50 ms) 50 V VCK CK pin voltage 6 V VDATA Data pin voltage 6 V IO Output peak current (not repetitive t = 100 ms) 8 A IO Output peak current (repetitive f > 10 Hz) 6 A Ptot Power dissipation Tcase = 70 °C 85 W Tstg, Tj Storage and junction temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter PowerSO36 Flexiwatt 27 Unit Rth j-case Thermal resistance junction-to-case Max 1 1 °C/W Table 4. Electrical characteristics Symbol Parameter Test condition Min. Typ. Max. Unit Power amplifier VS Supply voltage range - 8 - 18 V Id Total quiescent drain current - - 170 300 mA PO Output power Max. power (VS = 15.2 V, square wave input (2-Vrms)) -50- W THD = 10-% THD = 1-% 25 20 28 22 - W W RL = 2-Ω; EIAJ (VS = 13.7-V) RL = 2-Ω; THD 10-% RL = 2-Ω; THD 1-% RL = 2-Ω; max power 55 40 32 60 68 50 40 75 - W W W W |
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