1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

60

V

IF(RMS) Forward rms current

SMA/DO-41

10

A

STmite flat

2

IF(AV)

Average forward current δ = 0.5, square wave

SMA

TL = 155 °C

1

A

SMA Flat Notch

TL = 160 °C

DO-41

TL = 145 °C

SOD123 Flat

TL = 160 °C

STmite flat

TC = 160 °C

IFSM

Surge non repetitive forward current

SMA, DO-41, STmite flat

tp = 10 ms sinusoidal

40

A

SMA Flat Notch

60

SOD123 Flat

50

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

85

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature(1)

+175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

SMA

30

°C/W

SMA Flat Notch

20

DO-41/lead length = 10 mm

45

SOD123 Flat

20

Rth(j-c)

Junction to case

STmite flat

20

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

50

µA

Tj = 100 °C

-

1.5

5

mA

Tj = 125 °C

-

5.6

21

STPS1L60

Characteristics

DS2133 - Rev 12

page 2/19