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EMIF01-5250SC5 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF01-5250SC5 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() Symbol Parameter and test conditions Value Unit VPP ESD discharge IEC1000-4-2, air discharge ESD discharge IEC1000-4-2, contact discharge 15 8 kV Tj Junction temperature 150 °C Top Operating temperature range -30 to + 85 °C Tstg Storage temperature range -55 to +150 °C TL Lead temperature for soldering during 10s 260 °C Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 678 V IRM VRM = 3V 1 µA Rd Ipp = 10 A, tp = 2.5 µs0.55 Ω Cz 0 V bias, VRMS = 30 mV, F = 1 MHz 90 pF trr IF = 10 mA, dIF/dt = 20 A/ µs, RL = 100 Ω, Tj = 25 °C 40 ns ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol Parameter VBR Breakdown voltage IRM Leakage current Rd Dynamic impedance CZ Zener capacitance trr Reverse recovery time ELECTRICAL CHARACTERISTICS of the ZENER DIODE (Tamb = 25 °C) VBR VRM I V IRM IR IPP Rd EMIF01-5250SC5 2/5 |
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