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EMIF02-600FU7 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF02-600FU7 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Symbol Parameter and test conditions Value Unit VPP ESD discharge IEC1000-4-2, air discharge ESD discharge IEC1000-4-2, contact discharge 16 9 kV Tj Junction temperature 150 °C Top Operatingtemperature range -40 to + 85 °C Tstg Storage temperature range -55 to +150 °C TL Lead solder temperature (10 second duration) 260 °C ABSOLUTE MAXIMUM RATINGS (Tamb =25 °C) Symbol Test conditions Min. Typ. Max. Unit VBR IR =1 mA 6 7 8 V IRM VRM =3V 1 µA RI/O Serial resistance between Input and Output 480 600 720 Ω Rd Ipp =10 A, tp = 2.5 µs (see note 1) 0.55 Ω Note 1 : to calculate the ESD residual voltage, please refer to the paragraph ”ESD PROTECT ION” on pages 4 & 5 Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Serial resistance between Input and Output ELECTRICAL CHARACTERISTICS (Tamb =25 °C) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.5 1.0 2.0 5.0 10.0 20.0 IR[VR] / IR[VR=3V] VR (V) Fig.1 : Relative variation of leakage current versus reverse voltage(Typical values) EMIF02-600FU7 2/9 |
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