Figure 5. Normalized avalanche power derating versus

pulse duration (Tj = 125 °C)

P

(tp)

P

(10 µs)

ARM

ARM

0.001

0.01

0.1

1

1

10

100

1000

t (µs)

p

Figure 6. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMA)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z

/ R

th(j-a)

th(j-a)

Single pulse

SMA

t (s)

p

Figure 7. Relative variation of thermal impedance junction

to lead versus pulse duration (SMB Flat)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z

/ R

th(j-l)

th(j-l)

Single pulse

SMB Flat

t (s)

p

Figure 8. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMA Flat, SMA Flat

Notch)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z

/ R

th(j-a)

th(j-a)

Single pulse

SMA Flat / SMA Flat Notch

t (s)

p

Figure 9. Reverse leakage current versus reverse voltage

applied (typical values)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

5

10

15

20

25

30

I (mA)

R

VR(V)

Tj = 25 °C

Tj = 150 °C

Tj = 125 °C

Tj = 100 °C

Figure 10. Junction capacitance versus reverse voltage

applied (maximum values)

10

100

1000

1

10

100

C(pF)

V (V)

R

F=1MHz

V

=30mV

T =25°C

OSC

RMS

j

STPS2L30

Characteristics (curves)

DS1526 - Rev 8

page 4/16