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ESDA6V1S3 数据表(PDF) 4 Page - STMicroelectronics |
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ESDA6V1S3 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() 1 10 100 10 100 1000 2000 Ppp(W) tp( µs) Fig. 2 : Peak pulse power versus exponential pulse duration (Tj initial = 25 °C). 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Ppp[Tj initial]/Pp[Tj initial=25 °C] Tj initial( °C) Fig. 1 : Peak power dissipation versus initial junction temperature. 12 5 10 10 20 50 100 C(pF) F=1MHz Vosc=30mV V (V) R Fig. 4 : Capacitance versus reverse applied voltage (typical values). 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 0.1 1.0 10.0 50.0 Ipp(A) tp=2.5 µs V (V) CL Fig. 3 : Clamping voltage versus peak pulse current (Tj initial = 25 °C). Rectangular waveform tp = 2.5 µs. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.01 0.10 1.00 5.00 I (A) FM Tj=25 °C V (V) FM Fig. 6 : Peak forward voltage drop versus peak forward current (typical values). 25 50 75 100 125 1 10 100 200 I [Tj] / I [Tj=25 °C] RR Tj( °C) Fig. 5 : Relative variation of leakage current versus junction temperature (typical values). ESDA6V1S3 / ESDA6V2S6 4/7 |
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