Characteristics

STPS10L40C

2/12

DocID9433 Rev 7

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

40

V

IF(RMS)

Forward rms current

20

A

IF(AV)

Average forward current δ = 0.5,

square wave

TC = 140 °C

Per diode

5

A

Per device

10

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

150

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

190

W

Tstg

Storage temperature range

-65 to +150

°C

Tj

Maximum operating junction temperature (1)

+150

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

3.0

°C/W

Total

1.7

Rth(c)

Coupling

-

0.35

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

Table 4: Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

0.2

mA

Tj = 100 °C

-

8

25

mA

VF(1)

Forward voltage drop

Tj = 25 °C

IF = 5 A

-

0.53

V

Tj = 100 °C

IF = 5 A

-

0.36

0.46

Tj = 25 °C

IF = 10 A

-

0.67

Tj = 125 °C

IF = 10 A

-

0.49

0.59

Notes:

(1)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.33 x IF(AV) + 0.026 IF2(RMS)