Characteristics

STPS5H100

2/10

DocID5388 Rev 13

1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

RMS forward voltage

10

A

IF(AV)

Average forward current,

δ = 0.5, square wave

TC = 165 °C

5

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

75

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

515

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

2.5

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

3.5

µA

Tj = 125 °C

-

1.3

4.5

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

-

0.73

V

Tj = 125 °C

-

0.57

0.61

Tj = 25 °C

IF = 10 A

-

0.85

Tj = 125 °C

-

0.66

0.71

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.51 x IF(AV) + 0.02 x IF2(RMS)