STPS8H100D datasheet(3/14 Pages) STMICROELECTRONICS

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STPS8H100

Characteristics

DocID5387 Rev 12

3/14

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current

Figure 2: Normalized avalanche power derating

versus pulse duration (Tj= 125 °C)

Figure 3: Average forward current versus ambient

temperature, δ = 0.5 (TO-220AC, D²PAK)

Figure 4: Average forward current versus ambient

temperature, δ = 0.5 (TO-220FPAC)

Figure 5: Relative variation of thermal impedance

junction to case versus pulse duration (TO-220AC,

D²PAK)

Figure 6: Relative variation of thermal impedance

junction to case versus pulse duration (TO-

220FPAC)

123

567

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

(A)

F(av)

(W)

F(av)

δ = 0.2

δ = 0.5

δ = 1

δ = 0.05

δ = 0.1

δ=tp/T

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

020406080

100

120

140

160

180

Tamb (°C)

IF(AV)(A)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

δ=tp/T

020406080

100

120

140

160

180

Rth(j-a)=50°C/W

Rth(j-a)=Rth(j-c)

Tamb (°C)

IF(AV)(A)

δ=tp/T

1E-4

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c) /Rth(j-c)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c) /Rth(j-c)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

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