Characteristics

STPS8H100

2/14

DocID5387 Rev 12

1

Characteristics

Table 2: Absolute ratings (limiting values, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward

current δ = 0.5,

square wave

TO-220AC, D2PAK

TC = 165 °C

8

A

TO-220FPAC

TC = 150 °C

IFSM

Surge non

repetitive forward

current

tp = 10 ms sinusoidal

250

A

PARM

Repetitive peak

avalanche power

tp = 10 µs, Tj= 125 °C

750

W

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature (1)

+ 175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameter

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AC, D2PAK

1.6

°C/W

TO-220FPAC

4

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

4.5

µA

Tj = 125 °C

-

2.0

6.0

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 8 A

-

0.71

V

Tj = 125 °C

-

0.56

0.58

Tj = 25 °C

IF = 10 A

-

0.77

Tj = 125 °C

-

0.59

0.64

Tj = 25 °C

IF = 16 A

-

0.81

Tj = 125 °C

-

0.65

0.68

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.48 x IF(AV) + 0.0125 IF2(RMS)